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VRRM IFAVM IFSM VF0 rF VDClink
= = = = = =
6000 250 3.6 2.5 2.5 3000
V A kA V m V
Fast Recovery Diode
5SDF 02D6002
PRELIMINARY
Doc. No. 5SYA1108-02 Sep. 01
* Patented free-floating silicon technology * Low switching losses * Optimized for use as snubber diode in high-voltage GTO converters * Standard press-pack ceramic housing, hermetically cold-welded * Cosmic radiation withstand rating
Blocking
VRRM IRRM VDClink VDClink Repetitive peak reverse voltage Repetitive peak reverse current Permanent DC voltage for 100 FIT failure rate Permanent DC voltage for 100 FIT failure rate 6000 V 50 mA 3000 3800 V V Half sine wave, tP = 10 ms, f = 50 Hz VR = VRRM, Tj = 125C 100% Duty 5% Duty Ambient cosmic radiation at sea level in open air.
Mechanical data
Fm a Mounting force
(see Fig. 7)
min. max. 10 kN 12 kN
2 2
Acceleration:
Device unclamped Device clamped 50 m/s 200 m/s 0.25 kg 30 mm 20 mm
m DS Da
Weight Surface creepage distance Air strike distance
ABB Semiconductors AG reserves the right to change specifications without notice.
5SDF 02D6002
On-state (see Fig. 2, 3)
IFAVM IFRMS IFSM Max. average on-state current Max. RMS on-state current Max. peak non-repetitive surge current oI2dt Max. surge current integral 250 A 400 A 3.6 kA 11.4 kA
2 65103 A s 2 65103 A s
Half sine wave, Tc = 85C
tp tp tp tp IF
= = = = =
10 ms 1 ms 10 ms 1 ms 1000 A
Before surge: Tc = Tj = 125C After surge: VR 0 V
VF VF0 rF
Forward voltage drop Threshold voltage Slope resistance
5V 2.5 V 2.5 m
Approximation for IF = 200...4000 A
Tj = 125C
Turn-on (see Fig. 4, 5)
Vfr Peak forward recovery voltage 370 V di/dt = 1000 A/s, Tj = 125C
Turn-off (see Fig. 6)
Irr Qrr Err Reverse recovery current Reverse recovery charge Turn-off energy 260 A 2000 C -- J di/dt = 100 A/s, IF = 1000 A, RS = 22 , Tj = 125 C, VRM = 6000 V, CS = 0.22 F
Thermal (see Fig. 01)
Tj Tstg RthJC Operating junction temperature range Storage temperature range Thermal resistance junction to case RthCH Thermal resistance case to heatsink Analytical function for transient thermal impedance. -40...125C -40...125C 80 K/kW 80 K/kW 40 K/kW 16 K/kW 8 K/kW Anode side cooled Cathode side cooled Double side cooled Single side cooled Double side cooled Fm = 10... 12 kN
Z thJC (t) =
a
n
i
1 20.95 0.396
2 10.57 0.072
3 7.15 0.009
4 1.33 0.0044
R i (1 - e
- t / i
)
R i(K/kW)
i =1
i(s)
Fm = 10... 12 kN Double side cooled
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1108-02 Sep. 01 page 2 of 5
5SDF 02D6002
Fig. 1
Transient thermal impedance (junction to case) vs. time in analytical and graphical form (max. values).
Fig. 2
Forward current vs. forward voltage (typ. and max. values).
Fig. 3
Surge current and fusing integral vs. pulse width (max. values) for non repetitive, halfsinusoidal surge current pulses.
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1108-02 Sep. 01 page 3 of 5
5SDF 02D6002
Fig. 4
Typical forward voltage waveform when the diode is turned on with a high di/dt.
Fig. 5
Forward recovery voltage vs. turn-on di/dt (max. values).
Fig. 6
Typical current and voltage waveforms at turn-off with conventional RC snubber circuit
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1108-02 Sep. 01 page 4 of 5
5SDF 02D6002
Fig. 7
Outline drawing. All dimensions are in millimeters and represent nominal values unless stated otherwise.
ABB Semiconductors AG reserves the right to change specifications without notice.
ABB Semiconductors AG Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)62 888 6419 +41 (0)62 888 6306 abbsem@ch.abb.com www.abbsem.com
Doc. No. 5SYA1108-02 Sep. 01

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